Chemical Vapor Deposition
LPCVD
NNF Staff Contact: Jeff Hagler
Location: PECVD Bay
SiN Deposition
Conditions:
Temperature – 725C
Pressure – 321mTorr
Gas- NH3 (60%); Dichlorosilane (24%)
Atomic Layer Deposition
NNF Staff Contact: Elena Kovalik
Location: PECVD Bay
Oxides: Al2O3, HfO2, SiO2, ZrO2, TiO2
Nitrides: AlN, SiN, TiN
Samples: Pieces – 8″ Wafer
Deposition Temperatures: 100C – 400C
Plasma Capable with H2 Gas Flow
DLC PECVD
NNF Staff Contact: Bill Kiether
Location: 125 Lab (First Floor)
Diamond-like Carbon Plasma-Enhanced Chemical Vapor Deposition.
Plasmatherm PECVD
NNF Staff Contact: Jaime Rumsey
Location: High Bay
Dual Chamber 730/720 deposition system – SiO2 and SiN
Substrate holders configured for 4-8″
