Vapor Deposition
NNF Staff Contacts : Jeff Ricker-Hagler and Nicole Hedges
LPCVD
SiN Deposition
Conditions:
Temperature – 725C
Pressure – 321mTorr
Gas- NH3 (60%); Dichlorosilane (24%)
Atomic Layer Deposition
Oxides: Al2O3, HfO2, SiO2, ZrO2, TiO2
Nitrides: AlN, SiN, TiN
Samples: Pieces – 8″ Wafer
Deposition Temperatures: 100C – 400C
Plasma Capable with H2 Gas Flow
DLC PECVD
Diamond-like Carbon Plasma-Enhanced Chemical Vapor Deposition.
PECVD
Dual Chamber 730/720 deposition and etch system
Substrate holders configured for 4-8″