Vapor Deposition
NNF Staff Contacts : Jeff Ricker-Hagler and Nicole Hedges
![Pic15](https://nnf.ncsu.edu/wp-content/uploads/2023/06/Pic15-1-scaled.jpg)
LPCVD
SiN Deposition
Conditions:
Temperature – 725C
Pressure – 321mTorr
Gas- NH3 (60%); Dichlorosilane (24%)
Atomic Layer Deposition
Oxides: Al2O3, HfO2, SiO2, ZrO2, TiO2
Nitrides: AlN, SiN, TiN
Samples: Pieces – 8″ Wafer
Deposition Temperatures: 100C – 400C
Plasma Capable with H2 Gas Flow
![Pic14](https://nnf.ncsu.edu/wp-content/uploads/2023/06/Pic14.jpg)
![](https://nnf.ncsu.edu/wp-content/uploads/2017/11/image1.jpg)
![Pic19](https://nnf.ncsu.edu/wp-content/uploads/2023/06/Pic19-scaled.jpg)
DLC PECVD
Diamond-like Carbon Plasma-Enhanced Chemical Vapor Deposition.
PECVD
Dual Chamber 730/720 deposition and etch system
Substrate holders configured for 4-8″
![Pic11](https://nnf.ncsu.edu/wp-content/uploads/2023/06/Pic11-scaled.jpg)