Plasma Etching

NNF Staff Contacts : Marcio Cerullo and Jeff Ricker Hagler

Oxford NGP80 RIE

Gases: CF4, CHF3, C2F6, SF6, Ar, O2

Standard Etches : SiO2, Si3N4, Glass, Si, and SiC

Samples : 1 – 4″ Wafer or Equivalent Area

Allowed Masking Materials: Photoresists and SU8

 

Etch rates, selectivity to photo-resist, uniformity and wall angle profile data:

A standard process for Si etching (Fluorine based) is checked weekly and data is
collected to observe and correct deviations >10%. Chamber cleaning, process
conditioning steps and MFC’s calibration are scheduled based on the data to
maintain equipment performance.

Calibration data can be viewed per power level: 120W, 170W, and 220W.

Alcatel Deep Reactive Ion Etch

Gases : SF6, C4F8, CF4, Ar, O2

Standard Etches : Si, Glass, SiO2

Samples : 1 – 6″ Wafer or Equivalent Area

Allowed Masking Materials : Photoresist, SU8, and Nickel

 

Oxford Plasmalab 100 ICP Etcher

Gases : BCl3, Cl2, SF6, O2, Ar, N2

Standard Etches : GaN, AlGaN

Samples : 1 – 6″ Wafer or Equivalent Area

Allowed Masking Materials : Photoresist and SU8

 

Etch rates, selectivity to photo-resist, uniformity and wall angle profile data:

A standard process for Si etching (Chlorine based) is checked weekly and data is
collected to observe and correct deviations >10%. Chamber cleaning, process
conditioning steps and MFC’s calibration are scheduled based on the data to
maintain equipment performance.

Calibration data can be viewed per pressure level: 15mTorr and 30mTorr.

Semigroup

Gases : CHF3, SF6, Ar, O2

Standard Etches : SiO2, Si3N4, Poly-Si, SiC

Samples : 1 – 6″ Wafer or Equivalent Area

Allowed Masking Material : Photoresist, SU8, and Metals