Thermal Oxidation

NNF Staff Contacts: Nicole Hedges & Jeff Hagler

Location: Furnace Bay

SiC Oxidation :

Samples : 2″ – 6″ Wafers

Gases : N2, O2, HCl

Temperatures : 1200C

Dry Oxidation:

Samples : 2″ – 6″ Wafers

Gases : N2, O2, HCl

Temperatures : 850C, 950C, 1000C, 1100C

Oxide Thickness Maximum : 300nm

Anneal

N2 Anneal

Annealsys Rapid Thermal Processor

NNF Staff Contact: Bill Kiether

Location: Plasma Bay

Samples : Pieces – 6″ Wafers

Gases : N2, N2/H2, O2

Pressures : Vacuum – Atmospheric

Temperatures : 250C – 1200C