Thermal Processing
NNF Staff Contacts : Jeff Ricker-Hagler and Nicole Hedges
![Pic42](https://nnf.ncsu.edu/wp-content/uploads/2023/06/Pic42-scaled.jpg)
Thermal Oxidation
SiC Oxidation :
Samples : 2″ – 6″ Wafers
Gases : N2, O2, HCl
Temperatures : 1200C
Dry Oxidation:
Samples : 2″ – 6″ Wafers
Gases : N2, O2, HCl
Temperatures : 850C, 950C, 1000C, 1100C
Oxide Thickness Maximum : 300nm
Anneal
N2 Anneal
Heatpulse 610 Rapid Thermal Annealing
Samples : Pieces on Carrier – 6″ Wafer
Gases : N2, N2/H2, N2O
Pressure : Atmosphere
Temperatures : 250C – 1100C
![](https://nnf.ncsu.edu/wp-content/uploads/2017/11/IMG_3121.jpg)
![Pic46](https://nnf.ncsu.edu/wp-content/uploads/2023/06/Pic46-scaled.jpg)
Annealsys Rapid Thermal Processor
Samples : Pieces – 6″ Wafers
Gases : N2, N2/H2, O2
Pressures : Vacuum – Atmospheric
Temperatures : 250C – 1200C