Thermal Processing

NNF Staff Contacts : Jeff Ricker-Hagler and Nicole Hedges

Thermal Oxidation

Steam Oxidation :

Samples : 2″ – 6″ Wafers

Gases : N2, O2, H2, HCl

Temperatures : 950C and 1050C

Oxide Thickness Maximum : 1um

Dry Oxidation:

Samples : 2″ – 6″ Wafers

Gases : N2, O2, HCl

Temperatures : 850C, 950C, 1000C, 1100C

Oxide Thickness Maximum : 300nm

Doping

Phosphorus Doping

Boron Doping

Anneal

Forming Gas N2/H2

Drive-In Anneal

Heatpulse 610 Rapid Thermal Annealing

Samples : Pieces on Carrier – 6″ Wafer

Gases : N2, N2/H2, N2O

Pressure : Atmosphere

Temperatures : 250C – 1100C

Annealsys Rapid Thermal Processor

Samples : Pieces – 6″ Wafers

Gases : N2, N2/H2, O2

Pressures : Vacuum – Atmospheric

Temperatures : 250C – 1300C