Vapor Deposition
LPCVD – Staff Contact Jeff Hagler
SiN Deposition
Conditions:
Temperature – 725C
Pressure – 321mTorr
Gas- NH3 (60%); Dichlorosilane (24%)
Atomic Layer Deposition – Staff Contact Nicole Hedges
Oxides: Al2O3, HfO2, SiO2, ZrO2, TiO2
Nitrides: AlN, SiN, TiN
Samples: Pieces – 8″ Wafer
Deposition Temperatures: 100C – 400C
Plasma Capable with H2 Gas Flow
DLC PECVD – Staff Contact Bill Kiether
Diamond-like Carbon Plasma-Enhanced Chemical Vapor Deposition.
Plasmatherm PECVD – Staff Contact Jaime Rumsey
Dual Chamber 730/720 deposition system – SiO2 and SiN
Substrate holders configured for 4-8″
