Thermal Processing
Thermal Oxidation – Staff Contact Nicole Hedges and Jeff Hagler
SiC Oxidation :
Samples : 2″ – 6″ Wafers
Gases : N2, O2, HCl
Temperatures : 1200C
Dry Oxidation:
Samples : 2″ – 6″ Wafers
Gases : N2, O2, HCl
Temperatures : 850C, 950C, 1000C, 1100C
Oxide Thickness Maximum : 300nm
Anneal
N2 Anneal
Heatpulse 610 Rapid Thermal Annealing – Staff Contact Bill Kiether
Samples : Pieces on Carrier – 6″ Wafer
Gases : N2, N2/H2, N2O
Pressure : Atmosphere
Temperatures : 250C – 1100C
Annealsys Rapid Thermal Processor- Staff Contact Bill Kiether
Samples : Pieces – 6″ Wafers
Gases : N2, N2/H2, O2
Pressures : Vacuum – Atmospheric
Temperatures : 250C – 1200C